PART |
Description |
Maker |
SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash From old datasheet system (SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc] SST[Silicon Storage Technology, Inc]
|
39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
M29W800DT70N6E M29W800DT70N6F M29W800DT70N6T M29W8 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
SST27SF010-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
|
M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位(x16插槽,多银行,多层次,多突发28兆位闪存(突发)移动存储芯片.8V电源,多芯片封装
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
CY14B104NA-BA20XI CY14B104NA-BA20XIT CY14B104NA-BA |
4-Mbit (512 K ? 8/256 K ? 16) nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM
|
Cypress Semiconductor http://
|
CY14B108L-ZS45XIT CY14B108N-ZSP25XI CY14B108L-BA25 |
8-Mbit (1024 K ? 8/512 K ? 16) nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM
|
Cypress Semiconductor
|
CY7C1387D-167AXCT |
18-Mbit (512 K 36/1 M 18) Flow-Through SRAM
|
Cypress
|
CY7C1049CV33-12ZSXA CY7C1049CV33-12ZSXAT CY7C1049C |
4-Mbit (512 K 8) Static RAM
|
Cypress
|